Apparatus and methods for forming film pattern,申请号US20020275000-传众专利搜索

Apparatus and methods for forming film pattern

申请公布号：US2003083203(A1)

申请号：US20020275000

申请日期：2002.10.22

申请公布日期：2003.05.01

申请人：

SEIKO EPSON CORPORATION

发明人：HASHIMOTO TAKASHI;FURUSAWA MASAHIRO

分类号：B41J2/01;B41J3/407;H01L21/288;H01L21/768;H05K3/10;H05K3/12;(IPC1-7):H01B1/00

主分类号：B41J2/01

摘要：The invention provides a method for forming a film pattern, in which a method for forming a film pattern by the ink-jet method is improved, an increase in film thickness is achieved efficiently with simple steps, a requirement for a decrease in line width is met and, in addition, problems such as breaks and short circuits are not brought about when a conductive film is made. The method can include a first discharging step, wherein droplets are discharged in the whole film formation region with a pitch larger than the diameter of the droplet after being hit onto the substrate. In the second discharging step, droplets are discharged at positions in the whole film formation region different from the discharge positions in the first discharging step with the same pitch as that in the first discharging step. In the third discharging step, droplets are discharged in the whole film formation region with a pitch smaller than the pitch in the first discharging step. The substrate is treated beforehand in order to have the contact angle of 60 degrees or more with respect to the droplets.