Methods of forming an insulating material proximate a substrate, and methods of forming an insulating material between components of an integrated circuit,申请号US20010863592-传众专利搜索

Methods of forming an insulating material proximate a substrate, and methods of forming an insulating material between components of an integrated circuit

申请公布号：US6548107(B2)

申请号：US20010863592

申请日期：2001.05.22

申请公布日期：2003.04.15

申请人：

MICRON TECHNOLOGY, INC.

发明人：FORBES LEONARD;AHN KIE Y.

分类号：H01L21/316;H01L21/768;(IPC1-7):B05D5/12;C23C16/42

主分类号：H01L21/316

摘要：In one aspect, the invention encompasses a method of forming an insulating material around a conductive component. A first material is chemical vapor deposited over and around a conductive component. Cavities are formed within the first material. After the cavities are formed, at least some of the first material is transformed into an insulative second material. In another aspect, the invention encompasses a method of forming an insulating material. Polysilicon is deposited proximate a substrate. A porosity of the polysilicon is increased. After the porosity is increased, at least some of the polysilicon is transformed into silicon dioxide.