Method and apparatus for treating a substrate with an ozone-solvent solution II,申请号US20020126073-传众专利搜索

Method and apparatus for treating a substrate with an ozone-solvent solution II

申请公布号：US2003051742(A1)

申请号：US20020126073

申请日期：2002.04.19

申请公布日期：2003.03.20

申请人：

BOYERS DAVID G.

发明人：BOYERS DAVID G.

分类号：B08B3/08;G03F7/42;H01L21/311;(IPC1-7):B08B3/00

主分类号：B08B3/08

摘要：This invention concerns a method for treating a material on a substrate. It comprises the steps of a) forming an ozone-solvent solution at a first temperature; and b) reacting the ozone-solvent solution with the material at a second temperature, wherein the first temperature is lower than the second temperature, the lower first temperature facilitating an increased concentration of dissolved ozone in the solvent, the higher second temperature facilitating an increased reaction rate between the ozone-solvent solution and the material. After step b) the material is then rinsed (step c) with a first rinse solution. Then, after step c) the ozone-solvent solution is reacted with the material at a third temperature (step d) which is higher than the first temperature. Exposure of the substrate to the ozone-solvent solution and the rinse solution may be carried out a number of times. The invention applies to a number of substrates including semiconductor wafers, flat panel displays and the like. Typical rinse solutions include water, DI water, ultra-pure water, DI water mixed with a base, DI water mixed with an acid, DI water mixed with a process compatible detergent or surfactant, isopropyl alcohol (IPA), DI water mixed with IPA, and mixtures of one of more low molecular weight alcohols and water.