Semiconductor device and fabricating method thereof

申请公布号：US2003034561(A1)

申请号：US20020274555

申请日期：2002.10.21

申请公布日期：2003.02.20

申请人：

SUGAI KAZUMI

发明人：SUGAI KAZUMI

分类号：H01L23/52;H01L21/28;H01L21/3205;H01L21/768;H01L23/532;(IPC1-7):H01L21/476;H01L23/48;H01L29/40

主分类号：H01L23/52

摘要：First, a lower layer wiring is formed on a semiconductor substrate. Then, an interlayer insulating film is formed on the lower layer wiring. Next, a first Ti film is formed on the interlayer insulating film. Thereafter, a TiN film is formed on the first Ti film. Then, a via hole is formed in the TiN film, the first Ti film and the interlayer insulating film such as to reach the lower layer wiring. Then, a second Ti film and an Al or Al alloy film are sequentially formed in the via hole and on the TiN film. Next, a thermal treatment is carried out, thereby allowing Ti in the second Ti film and Al in the Al or Al alloy film to react with each other in a bottom of the via hole.

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