Semiconductor device having gate electrode in which depletion layer can be generated

申请公布号：US2003034520(A1)

申请号：US20020232703

申请日期：2002.09.03

申请公布日期：2003.02.20

申请人：

MITSUBISHI DENKI KABUSHIKI KAISHA

发明人：KUSUNOKI SHIGERU

分类号：H01L21/8247;H01L21/74;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108;H01L27/115;H01L29/423;H01L29/49;H01L29/78;H01L29/786;H01L29/788;H01L29/792;(IPC1-7):H01L29/94;H01L31/062

主分类号：H01L21/8247

摘要：Performance for a gate insulation film of an insulated gate transistor is enhanced. A depletion layer is generated in a region of a gate electrode 12 which is provided in contact with a gate insulation film 4 in an OFF state, and the depletion layer disappears or a width thereof is reduced in an ON state.

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