METHOD AND APPARATUS FOR VACUUM TREATMENT,申请号JP20010229522-传众专利搜索

METHOD AND APPARATUS FOR VACUUM TREATMENT

申请公布号：JP2003041369(A)

申请号：JP20010229522

申请日期：2001.07.30

申请公布日期：2003.02.13

申请人：

CANON INC

发明人：KAWAMURA KUNIMASA;UEDA SHIGENORI;OTSUKA TAKASHI

分类号：G03G5/08;C23C16/509;H01L21/205;(IPC1-7):C23C16/509

主分类号：G03G5/08

摘要：PROBLEM TO BE SOLVED: To improve vacuum treating rate and vacuum treatment characteristics, uniformize vacuum treatment characteristics, and reduce a vacuum treatment cost, when vacuum treating simultaneously several articles to be treated with the use of plasma. SOLUTION: This apparatus comprises arranging several cylindrical substrates 101 in a reaction vessel 102, supplying high frequency powers of two different frequencies f1 and f2 simultaneously to a same high frequency electrode 104, generating plasma by the high frequency power introduced into the reaction vessel 102, decomposing the gas introduced into the reaction vessel 102 through a raw material gas introduction pipe 103, and forming the deposition film on the cylindrical substrate 101. The two different frequencies f1 and f2 satisfy a relation of 250 MHz>=f1>f2>=10 MHz, and 0.9>=f2/f1>=0.1. The several articles to be treated 101 are arranged at such regular intervals in the reaction vessel 102, that the distance (the shortest distance) d (mm) between the adjacent articles to be treated satisfies d>=4,000/(f1+f2).