SEMICONDUCTOR SUBSTRATE AND FIELD EFFECT TRANSISTOR, AND MANUFACTURING METHOD THEREFOR,申请号JP20010200121-传众专利搜索

SEMICONDUCTOR SUBSTRATE AND FIELD EFFECT TRANSISTOR, AND MANUFACTURING METHOD THEREFOR

申请公布号：JP2003017671(A)

申请号：JP20010200121

申请日期：2001.06.29

申请公布日期：2003.01.17

申请人：

MITSUBISHI MATERIALS SILICON CORP;MITSUBISHI MATERIALS CORP

发明人：MIZUSHIMA KAZUKI

分类号：H01L29/161;H01L21/02;H01L21/8234;H01L27/08;H01L27/088;H01L27/12;H01L29/786;(IPC1-7):H01L27/12;H01L21/823

主分类号：H01L29/161

摘要：PROBLEM TO BE SOLVED: To provide a semiconductor substrate and field effect transistor as well as manufacturing methods therefor, of less defects and leak current, with a low manufacturing cost while the thickness of an SOI layer is precisely controlled even to a thin one. SOLUTION: There are provided a process where a first substrate A is formed by epitaxially growing a first SoGe layer 2, a first distortion Si layer 3 in which Si is epitaxially grown on the first SiGe layer, and a second SiGe layer 4 on a first Si substrate SUB1 directly or through another layer; a process where the ion is implanted into the first distortion Si layer or its vicinity from above the surface of the first substrate; a process where, after the previous process, the surface of the first substrate is tightly contacted and jointed to the surface of the second substrate B in which Si or its oxide film is contained in its surface; and a process where, after the previous process, the first distortion Si layer or its interface is beveled to release the first sunbstrate.