Fabrication of an active element for an integrated circuit by auto-alignment with some zones of high quality monocrystalline silicon zones,申请号FR20010007717-传众专利搜索

Fabrication of an active element for an integrated circuit by auto-alignment with some zones of high quality monocrystalline silicon zones

申请公布号：FR2826178(A1)

申请号：FR20010007717

申请日期：2001.06.13

申请公布日期：2002.12.20

申请人：

STMICROELECTRONICS SA

发明人：MENUT OLIVIER;JAOUEN HERVE

分类号：H01L21/331;(IPC1-7):H01L21/477;H01L27/04

主分类号：H01L21/331

摘要：Fabrication of an integrated circuit incorporating a monocrystalline silicon substrate (2), at least one layer of polycrystalline silicon laid on the upper surface (2a) of the substrate and provided with at least two doping species of different diffusion speeds, consists of annealing at a temperature and duration such that a first doping species diffuses into a first zone and a second doping species diffuses into a second zone more extended than the first zone. An Independent claim is also included for an integrated circuit obtained by this method of fabrication.