METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE,申请号KR19950050894-传众专利搜索

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

申请公布号：KR100358161(B1)

申请号：KR19950050894

申请日期：1995.12.16

申请公布日期：2002.10.10

申请人：

HYNIX SEMICONDUCTOR INC.

发明人：LEE, TAE GUK;KIM, HAK MUN

分类号：H01L21/308;(IPC1-7):H01L21/308

主分类号：H01L21/308

摘要：PURPOSE: A method for manufacturing a semiconductor device is provided to remove scum of photoresist and stringer by using a water-soluble base, thereby improving the uniformity of patterns. CONSTITUTION: An etching layer(33) with negative profile is formed on a semiconductor substrate(31). A water-soluble base(36) is formed on the etching layer. By using a photoresist pattern as a mask, the water-soluble base is selectively etched. By using the water-soluble pattern as a mask, the etching layer is selectively etched.