Semiconductor device and method for manufacturing the same,申请号US20000556961-传众专利搜索

Semiconductor device and method for manufacturing the same

申请公布号：US6440843(B1)

申请号：US20000556961

申请日期：2000.04.21

申请公布日期：2002.08.27

申请人：

KABUSHIKI KAISHA TOSHIBA

发明人：WADA JUNICHI;SAKATA ATSUKO;KATATA TOMIO;USUI TAKAMASA;HASUNUMA MASAHIKO;SHIBATA HIDEKI;KANEKO HISASHI;HAYASAKA NOBUO;OKUMURA KATSUYA

分类号：H01L21/285;H01L21/768;(IPC1-7):H01L23/58

主分类号：H01L21/285

摘要：A method of manufacturing semiconductor device which comprises the steps of forming an insulating film on an Si substrate provided with a wiring layer, forming a contact hole connected to the wiring layer and a wiring groove in the insulating film, filling the contact hole with an Si film, successively forming an Al film and a Ti film all over the substrate, performing a heat treatment thereby to substitute the Al film for the Ti film, and to allow the Si film to be absorbed by the Ti film, whereby filling the contact hole and wiring groove with the Al film, and removing a Ti/Ti silicide which is consisting of Ti silicide formed through the absorption of the Si film by the Ti film and a superfluous Ti, whereby filling the contact hole with an Al plug and filling the wiring groove with an Al wiring.