ETCHING METHOD OF SILICON WAFER,申请号JP20010021768-传众专利搜索

ETCHING METHOD OF SILICON WAFER

申请公布号：JP2002231691(A)

申请号：JP20010021768

申请日期：2001.01.30

申请公布日期：2002.08.16

申请人：

MITSUBISHI MATERIALS SILICON CORP

发明人：NORIMOTO MASAFUMI;TAKAISHI KAZUNARI

分类号：C23F1/08;C23F1/24;H01L21/306;H01L21/308;(IPC1-7):H01L21/306

主分类号：C23F1/08

摘要：PROBLEM TO BE SOLVED: To provide an etching method of a silicon wafer for keeping an proper planarity obtained through mechanical manufacturing of wrapping and the like. SOLUTION: In an etching method of a silicon wafer, silicon wafers, having a process degenerated surface layer are sequentially impregnated with in an acid-etching solution having a chemical composition of a reaction rate limiting type including a hydrofluoric acid and a nitric acid fully stored in two to six etching tanks sequentially, and the wafers are etched. In the method, the machining allowance for one tank is 16μm or less for the total front and rear sides of silicon wafer, and the etching grade is 0.3μm per second or less for the total front and rear sides of silicon wafer. The ratio of hydrofluoric acid to nitric acid in the etching solution is 0.07<=[HF]wt/[HNO3]wt<=0.59 by weight.