Semiconductor memory device having redundancy circuit capable of improving redundancy efficiency,申请号US20000657318-传众专利搜索

Semiconductor memory device having redundancy circuit capable of improving redundancy efficiency

申请公布号：US6426902(B1)

申请号：US20000657318

申请日期：2000.09.07

申请公布日期：2002.07.30

申请人：

SAMSUNG ELECTRONICS CO., LTD.

发明人：LEE HI-CHOON;LEE SEUNG-HOON;KIM HYUNG-DONG

分类号：G11C11/401;G11C29/00;G11C29/04;H01L27/10;(IPC1-7):G11C7/00

主分类号：G11C11/401

摘要：A redundancy circuit is used to repair a normal column containing a defective normal memory cell. The redundancy circuit comprises a redundancy column containing redundancy memory cells and a plurality of programmable decoders. When any one of the plurality of programmable decoders enters a repair mode, a column pre-decoder for selecting a column containing a normal memory cell is disabled. Each of the programmable decoders can be configured to replace a column containing a defective normal memory cell in a single memory bank or a single memory bank group with a redundancy column. Since a defective column is replaced with a redundancy column in individual banks or bank groups, redundancy efficiency is greatly improved by allowing multiple normal columns containing defective cells to be replaced using a single redundancy column.