PATTERN FORMING METHOD,申请号JP20000295240-传众专利搜索

PATTERN FORMING METHOD

申请公布号：JP2002110499(A)

申请号：JP20000295240

申请日期：2000.09.27

申请公布日期：2002.04.12

申请人：

TOSHIBA CORP

发明人：SATO YASUHIKO;SHIBATA TAKESHI;ONISHI KIYONOBU;OUCHI JUNKO

分类号：H01L21/027;G03F7/11;H01L21/308;(IPC1-7):H01L21/027

主分类号：H01L21/027

摘要：PROBLEM TO BE SOLVED: To provide a pattern forming method which makes patterns on a film under process in a pattern transfer process using spin-on-glass without breaking the spin-on-glass. SOLUTION: The method comprises a step of applying onto a film under process a solution prepared by dissolving an inorganic compound having a bond of an inorganic element with oxygen and a compound containing a volatile unit or soluble unit with a solvent to form a mask material, a step of volatilizing the volatile unit or selectively dissolving out the soluble unit to make the mask material porous, a step of forming a resist pattern on the mask material, a step of dry etching the mask material with the resist pattern used as a mask to form a mask material pattern, and a step of dry etching the film under process to form a film pattern using the mask material pattern as a mask.