SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD,申请号KR20010049507-传众专利搜索

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

申请公布号：KR20020014756(A)

申请号：KR20010049507

申请日期：2001.08.17

申请公布日期：2002.02.25

申请人：

HITACHI HOKKAI SEMICONDUCKTOR, LTD.;HITACHI.LTD.

发明人：KASUGA TAKAHIRO;TASAKA KAZUO;TOMIHARA SEIICHI

分类号：H01L23/28;H01L21/56;H01L23/31;H01L23/50;H05K3/34

主分类号：H01L23/28

摘要：PURPOSE: To inhibit the occurrence of resin cracks or rubbish when cutting gate- and air vent-curing resins in the manufacture of a non-lead semiconductor device. CONSTITUTION: The manufacture of the non-lead semiconductor device has a sealing body, and the gate- and air vent-curing resin allowed to remain by exposing a lead and a tab-suspending lead on the packaging surface of the sealing body for forming the sealing body. No grooves for allowing a distance resin to flow are provided in the entire circumference of the cavity of a mold die for forming the sealing body. Outside a region with no grooves, gate and air vents are provided. The resin between the cavity and the gate and air vents is allowed to flow through the gap between the adjacent leads and tab- suspending leads. When the lead and tab-suspending lead are cut at a place with no grooves, the surface of the gate- and air vent-curing resins is the same as the lead and tab-suspending lead and at the same time is flat, thus inhibiting the occurrence of the resin rubbish and cracks.