Use of non-ion-implanted resistive silicon oxynitride films as resistors,申请号US20010896400-传众专利搜索

Use of non-ion-implanted resistive silicon oxynitride films as resistors

申请公布号：US2001045618(A1)

申请号：US20010896400

申请日期：2001.06.29

申请公布日期：2001.11.29

申请人：

MICRON TECHNOLOGY, INC.

发明人：TRIVEDI JIGISH D.

分类号：H01C7/00;H01C17/08;H01L21/02;H01L27/08;H01L27/11;(IPC1-7):H01L29/00

主分类号：H01C7/00

摘要：The present disclosure is directed to the use of non-ion-implanted silicon oxynitride films as resistive elements. Such films have been traditionally used in semiconductor processing as antireflective coatings, but their utility as highly resistive circuit elements has heretofore not been realized. Such films find specific utility when used as the load resistors in a 4-T SRAM cell.