防止低介电常数材料中的铜互连被氧化的结构
申请公布号:CN1319891A
申请号:CN01111894.6
申请日期:2001.03.22
申请公布日期:2001.10.31
发明人:V·J·麦加海;E·N·莱维尼
分类号:H01L23/52;H01L21/768
主分类号:H01L23/52
代理人:罗朋;王忠忠
地址:美国纽约州
摘要:一种在集成电路中存在氧或水的情况下用来防止铜结构被氧化的由致密材料组成的扩散势垒,但它受到针孔之类的缺陷影响,借助于对能够以自限方式形成保护性氧化物的与致密材料相接触的最好是膜的材料进行氧化来就地修补上述缺陷。为铜结构提供的这一保护,使铜的高导电率能够结合低介电常数(低K)材料被利用。这样做,目前认为承受了氧和水的扩散,提高了信号传播速度。
主权项:1.一种半导体器件,它包含绝缘层,铜结构,以及所述绝缘层与所述铜结构之间的复合扩散势垒,它包含由致密材料组成的层,以及由能够在存在氧或水的情况下,以自限方式形成保护性氧化物的材料组成的膜。
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