SPUTTERING TARGET AND BACKING PLATE MATERIAL
申请公布号:JP2001295040(A)
申请号:JP20000112409
申请日期:2000.04.13
申请公布日期:2001.10.26
发明人:KOSAKA YASUO;ISHIGAMI TAKASHI;FUJIOKA NAOMI;WATANABE TAKASHI;SUZUKI YUKINOBU
分类号:C23C14/34;H01L21/203;H01L21/285;(IPC1-7):C23C14/34
主分类号:C23C14/34
摘要:PROBLEM TO BE SOLVED: To provide a sputtering target, with which a backing plate can be integrally joined to a target material at high joining strength without coarsening the crystal grains of the target and the amount of particles generated during sputtering can be reduced. SOLUTION: In the sputtering target 1, a backing plate material 4 consisting of a plurality of metallic layers 2 and 3 is integrally joined to a target material 5 by means of diffusion joining or welding.
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