Process for preparing a semiconductor wafer,申请号US19940234073-传众专利搜索

Process for preparing a semiconductor wafer

申请公布号：US6297076(B1)

申请号：US19940234073

申请日期：1994.04.28

申请公布日期：2001.10.02

申请人：

LINTEC CORPORATION;TEXAS INSTRUMENTS, INC.

发明人：AMAGAI MASAZUMI;EBE KAZUYOSHI;SENOO HIDEO

分类号：C09J133/08;C08F2/26;C08F218/04;C08F220/06;C08F220/10;C08F220/12;C08F220/18;C09J4/00;C09J7/02;C09J133/00;C09J133/06;C09J133/10;H01L21/301;H01L21/52;H01L21/673;H01L21/68;H01L23/29;H01L23/495;H01L23/50;(IPC1-7):H01L21/44;H01L21/48;H01L21/50

主分类号：C09J133/08

摘要：Disclosed is a process for preparing a semiconductor device comprising the steps of adhering a back surface of a wafer, a front surface of which has been formed a circuit, onto the radiation curable adhesive layer, dicing the wafer into chips, rinsing, drying, irradiating the adhesive layer with radiation to cure said adhesive layer, expanding the adhesive sheet if necessary to make the chips apart from each other, then picking up the chips, mounting the picked chips on a lead frame, bonding, and molding to give such a structure that the back surfaces of the chips are partially or wholly in contact with a package molding resin, wherein the radiation curable adhesive layer comprises 100 parts by weight of an acrylic adhesive composed of a copolymer of an acrylic ester and an OH group-containing polymerizable monomer and 50-200 parts by weight of a radiation polymerizable compound having two or more unsaturated bonds, and the radiation curable adhesive layer has an elastic modulus of not less than 1x109 dyn/cm2 after curing by irradiation with radiation.