SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREFOR,申请号JP20000049133-传众专利搜索

SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREFOR

申请公布号：JP2001237487(A)

申请号：JP20000049133

申请日期：2000.02.25

申请公布日期：2001.08.31

申请人：

NEC CORP

发明人：OKUNUKI YUICHIRO

分类号：H01S5/026;H01S5/12;(IPC1-7):H01S5/026

主分类号：H01S5/026

摘要：PROBLEM TO BE SOLVED: To improve slope efficiency, while operation current and threshold current are reduced by suppressing the leakage current at a laser as well as an absorption loss at a spot size conversion part, related to a semiconductor laser, where a spot size converter is integrated and unified. SOLUTION: The carrier concentration at a p-type current block layer of the spot size conversion part of the semiconductor laser, where the spot size conversion part is integrated, is made lower than that at a p-type current block layer of the laser part.