Method of preventing current leakage around a shallow trench isolation structure
申请公布号:US6281081(B1)
申请号:US19980192042
申请日期:1998.11.13
申请公布日期:2001.08.28
发明人:CHIEN SUN-CHIEH;KUO CHIEN-LI;LEE TZUNG-HAN;LIAO WEI-WU
分类号:H01L21/762;(IPC1-7):H01L21/336;H01L21/76
主分类号:H01L21/762
摘要:An ion implantation method useful for fabricating shallow trench isolation structureimplants phosphorus ions instead of arsenic ions into a substrate when the source/drain regions of an NMOS device are doped. Alternatively, low energy ions are used in the ion implantation for forming the source/drain regions of an NMOS device. Consequently lattice dislocations of the crystal structure within a substrate is reduced and unwanted device leakage current is eliminated.
Endoskopisk instrument til udførelse af ligatur
FUEL ADDITIVE TO REDUCE EMISSIONS FROM INTERNAL COMBUSTION ENGINES
SAFETY ELEMENT OF FIRE ARM, ESPECIALLY FOR HUNTING RIFLES
O-BENZYL OXIME ETHERS, FUNGICIDES CONTAINING THEM, THEIR USE
DEVICE FOR THE PORTION-WISE RELEASE OF FLUID MASSES
PROCESS FOR THE MANUFACTURE OF AN AQUEOUS SOLUTION OF SODIUM HYDROXIDE
METHOD OF FORMING CELLULOSE SOLUTIONS
CYCLIC UREAS AND ANALOGUES, PHARMACEUTICAL COMPOSITIONS BASED THEREON
SHIRT COLLAR REINFORCING TEXTILE INTERLINING OR SIMILAR PIECE
METHOD OF CONTROLLING OPERATION OF A MULTIPLE-STATION NETWORK
THIAZOLOBENZOHETEROCYCLES, PREPARATION AND MEDICINES CONTAINING SAME
IONISATION-TYPE FILTER FOR PURIFICATION OF AIR
TREATMENT OF DIABETES BY MEANS OF THIAZOLYDINONE AND METFORMIN
EXPRESSION ADJUSTMENT OF QUINOLANE PHOSPHORIBOZYLTRANSFERASE