Fast MOSFET with low-doped source/drain,申请号US20000483400-传众专利搜索

Fast MOSFET with low-doped source/drain

申请公布号：US6238960(B1)

申请号：US20000483400

申请日期：2000.01.14

申请公布日期：2001.05.29

申请人：

ADVANCED MICRO DEVICES, INC.

发明人：MASZARA WITOLD P.;KRISHNAN SRINATH;LIN MING-REN

分类号：H01L21/336;H01L29/78;H01L29/786;(IPC1-7):H01L21/336

主分类号：H01L21/336

摘要：A method (100) of forming a transistor (50, 80) includes forming a gate oxide (120) over a portion of a semiconductor material (56, 122) and forming a doped polysilicon film (124) having a dopant concentration over the gate oxide (122). Subsequently, the doped polysilicon film (124) is etched to form a gate electrode (52) overlying a channel region (58) in the semiconductor material (56, 122), wherein the gate electrode (52) separates the semiconductor material into a first region (60) and a second region (68) having the channel region (58) therebetween. The method (100) further includes forming a drain extension region (64) in the first region (60) and a source extension region (72) in the second region (68), and forming a drain region (62) in the first region (60) and a source region (70) in the second region (68). The source/drain formation is such that the drain and source regions (62, 70) have a dopant concentration which is less than the polysilicon film (124) doping concentration. The lower doping concentration in the source/drain regions (62, 70) lowers the junction capacitance and provides improved control of floating body effects when employed in SOI type processes.