ELECTRIC FIELD RADIATION ELECTRON SOURCE AND METHOD FOR MANUFACTURING,申请号JP19990295951-传众专利搜索

ELECTRIC FIELD RADIATION ELECTRON SOURCE AND METHOD FOR MANUFACTURING

申请公布号：JP2001118489(A)

申请号：JP19990295951

申请日期：1999.10.18

申请公布日期：2001.04.27

申请人：

MATSUSHITA ELECTRIC WORKS LTD

发明人：HATAI TAKASHI;KOMODA TAKUYA;AIZAWA KOICHI

分类号：H01J9/02;H01J1/312;(IPC1-7):H01J1/312

主分类号：H01J9/02

摘要：<p>PROBLEM TO BE SOLVED: To provide an electric field radiation electron source and method of fabricating it that enhances the electron emission effect with high withstand voltage. SOLUTION: An electric field drift layer 6 is formed on the main surface of an n-type silicon substrate 1, having a surface electrode 7. An ohmic electrode 2 is formed in the inside of the silicon substrate 1. The strong electric field drift layer 6 is obtained by annealing a porous polycrystalline silicon layer formed by anode oxidizing process in an atmosphere of N2O or NO gas at 900 deg.C for an hour. The polycrystalline layer thus obtained has high electron emission efficiency, low defect density, and high withstand voltage compared to the conventional silicon layer.</p>