Method of fabricating semiconductor devices utilizing in situ passivation of dielectric thin films,申请号US19980114847-传众专利搜索

Method of fabricating semiconductor devices utilizing in situ passivation of dielectric thin films

申请公布号：US6201276(B1)

申请号：US19980114847

申请日期：1998.07.14

申请公布日期：2001.03.13

申请人：

MICRON TECHNOLOGY, INC.

发明人：AGARWAL VISHNU K.;SANDHU GURTEJ S.;DERDERIAN GARO J.

分类号：H01L21/02;H01L21/8242;(IPC1-7):H01L27/108;H01L29/76

主分类号：H01L21/02

摘要：A capacitor for a semiconductor device is fabricated by a method which reduces the interaction of a capacitor electrode and a dielectric layer in the capacitor. One or more passivation layers are formed at the interface between the dielectric layer and an electrode in the capacitor by exposing the dielectric layer or electrode to a reactive environment during fabrication in order to form a passivation layer thereon prior to forming an overlying dielectric layer or electrode. The passivation layer reduces the diffusion of oxygen from the dielectric layer to the electrode, resulting in reduced current leakage in the capacitor.