MANUFACTURE FOR SOLAR CELL,申请号JP19990072884-传众专利搜索

MANUFACTURE FOR SOLAR CELL

申请公布号：JP2000269527(A)

申请号：JP19990072884

申请日期：1999.03.18

申请公布日期：2000.09.29

申请人：

SHARP CORP

发明人：MIYAZAWA AKIRA;MACHIDA TOSHIHIRO

分类号：H01L31/04;(IPC1-7):H01L31/04

主分类号：H01L31/04

摘要：<p>PROBLEM TO BE SOLVED: To realize an isolation of a pn junction by a method wherein an impurity diffusion preventing layer for isolating the pn junction on a light receiv ing face of a semiconductor substrate is formed in a region different from the light receiving face of the semiconductor substrate by a CVD method, and the pn junction is formed with using the impurity diffusion preventing layer as a mask. SOLUTION: An impurity diffusion preventing layer 102 composed of silicon nitride is formed on a reverse face of a substrate 101 by a plasma CVD method. A thickness functioning as a mask material and a minute film are necessary as the impurity diffusion preventing layer 102. Incidentally, this film may be a silicon oxide film by the plasma CVD method, and further a thermal CVD method may be used as another method for forming this film. Next, a dopant containing a phosphorous compound is coated on a light receiving face of the substrate 101, and an n-type diffusion layer 103 is formed by a thermal processing, whereby a pn junction 104 is formed. In order to form the junction, the substrate 101 is transferred to a quartz tube furnace, so that it may be diffused by the same hermal processing by a vapor diffusion method with POCl3.</p>