MANUFACTURE OF SEMICONDUCTOR ELEMENT,申请号JP19990062768-传众专利搜索

MANUFACTURE OF SEMICONDUCTOR ELEMENT

申请公布号：JP2000260996(A)

申请号：JP19990062768

申请日期：1999.03.10

申请公布日期：2000.09.22

申请人：

MATSUSHITA ELECTRIC IND CO LTD

发明人：SATANI YUJI;FURUTA MAMORU;GOTO SHINJI

分类号：G09F9/30;G02F1/136;G02F1/1365;G02F1/1368;H01L21/20;H01L21/302;H01L21/3065;H01L21/336;H01L29/786;(IPC1-7):H01L29/786;H01L21/306

主分类号：G09F9/30

摘要：<p>PROBLEM TO BE SOLVED: To make the boundary surface between a crystalline semiconductor film and a gate insulation film flat and clean, in a semiconductor element provided with a crystalline semiconductor film made mainly of silicon as an active layer. SOLUTION: A crystalline semiconductor film (polycrystalline silicon film) 2 having a uneven surface is formed on a glass substrate 1 by the laser annealing method and is treated by a plasma using a mixed gas containing CF4 gas and CHF3 gas, so that the projecting parts are selectively etched to flatten the surface of the crystalline semiconductor film 2 and to make a flattened (polycrystalline silicon film 3. A gate insulating film 5 is formed thereon. Therefore, a flat and clean boundary surface can be formed and a semiconductor element that has less variation in characteristics or less scattering of carriers on the boundary surface is manufactured.</p>