Method for forming diffusion barrier layers,申请号US19980126094-传众专利搜索

Method for forming diffusion barrier layers

申请公布号：US6069073(A)

申请号：US19980126094

申请日期：1998.07.30

申请公布日期：2000.05.30

申请人：

ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人：KIM, YOUN TAE;JUN, CHI HOON;BAEK, JONG TAE

分类号：C23C14/58;C23C28/00;H01L21/285;H01L21/768;(IPC1-7):H01L21/28

主分类号：C23C14/58

摘要：An improved method for forming diffusion barrier layers for sub-micron connects in integrated circuits is disclosed. The dual diffusion barriers is easily formed according to two-step annealing processes. The anneal includes two anneal cycles or steps, each cycle is performed at a separate and distinct temperature cycles. Each cycle is performed in the presence of ammonia (NH3) or nitrogen ambient. As a result of the first low-temperature cycle, a nitridation occurs at the upper surface to form a binary diffusion barrier layer. As a result of the second high-temperature cycle, an out-diffusion of silicon ions occurs at the lower surface to form a ternary alloys. The dual diffusion barriers obtained by a simple and easy two-step anneal processing exhibits an improved barrier performance. Furthermore, it is possible to form highly stable multilevel interconnections without any deterioration problems by reducing the sophisticated processing steps.