Method of making a high current Schottky barrier device,申请号US19730340642-传众专利搜索

Method of making a high current Schottky barrier device

申请公布号：US3891479(A)

申请号：US19730340642

申请日期：1973.03.12

申请公布日期：1975.06.24

申请人：

MOTOROLA, INC.

发明人：ZWERNEMANN, ROSS

分类号：H01L29/06;H01L29/872;(IPC1-7):H01L3/00;H01L5/00;H01L29/48

主分类号：H01L29/06

摘要：A heavily doped N type conductivity substrate having a lightly doped N type conductivity epitaxial layer grown thereon with a centrally located buried layer diffused therein and a second lightly doped N type conductivity epitaxial layer grown on the first layer with a P type conductivity guardring diffused therein. The guardring is generally coaxial with the buried layer and a layer of metal is deposited on the surface of the second epitaxial layer to form a Schottky barrier device with the guardring lying generally below the periphery thereof. The buried layer extends upwardly within the guardring to provide a substantially uniform or constant thickness of lightly doped semiconductive material between the junction of the device and the heavily doped substrate.