Dot-junction photovoltaic cells using high-absorption semiconductors,申请号US19980046529-传众专利搜索

Dot-junction photovoltaic cells using high-absorption semiconductors

申请公布号：US6034321(A)

申请号：US19980046529

申请日期：1998.03.24

申请公布日期：2000.03.07

申请人：

ESSENTIAL RESEARCH, INC.

发明人：JENKINS, PHILLIP P.

分类号：H01L31/0224;H01L31/05;H01L31/052;H01L31/06;H01L31/072;(IPC1-7):H01L31/05

主分类号：H01L31/0224

摘要：A dot-junction photovoltaic cell using high absorption semi-conductors increases photovoltaic conversion performance of direct band gap semi-conductors by utilizing dot-junction cell geometry. This geometry is applied to highly absorbing materials, including Inx-1GaxAs. The photovoltaic cell configured to be separated into a thin active region and a thick, inactive substrate, which serves as a mechanical support.