SEMICONDUCTOR MEMORY DEVICE HAVING A BOOSTING CIRCUIT,申请号KR19980023205-传众专利搜索

SEMICONDUCTOR MEMORY DEVICE HAVING A BOOSTING CIRCUIT

申请公布号：KR20000002450(A)

申请号：KR19980023205

申请日期：1998.06.19

申请公布日期：2000.01.15

申请人：

SAMSUNG ELECTRONICS CO., LTD.

发明人：KANG, GYEONG WOO;KWON, HYEOK JUN

分类号：G11C11/413;(IPC1-7):G11C11/413

主分类号：G11C11/413

摘要：PURPOSE: Semiconductor memory device is provided to minimize the layout area by using a boosting circuit. CONSTITUTION: The present invention relates to a semiconductor memory device that includes a plurality of banks and uses a boosting voltage. The semiconductor memory device includes a standby boosting circuit for generating a boosting voltage by boosting an external power supply voltage in power-on mode, an active boosting circuit for generating a boosting voltage by boosting the external power supply voltage when the boosting voltage is less than the desired voltage in an active mode, and a plurality of bank boosting circuit that is operated in response to a bank information signal and an active initiating signal. Preferably, standby boosting circuit and the active boosting circuit exist in all the banks as a shared one respectively, and the bank boosting circuit exists as many as the number of the banks.