PLASMA PROCESSING METHOD,申请号JP19980188263-传众专利搜索

PLASMA PROCESSING METHOD

申请公布号：JP2000012531(A)

申请号：JP19980188263

申请日期：1998.06.18

申请公布日期：2000.01.14

申请人：

TOKYO ELECTRON LTD

发明人：GODAIIN HIRONORI;SAKURAI NAOKI;HIGUCHI FUMIHIKO

分类号：H05H1/46;C23F4/00;H01L21/302;H01L21/3065

主分类号：H05H1/46

摘要：PROBLEM TO BE SOLVED: To enable plasma to be quickly stabilized in a process of etching an Si film layer with use of Cl2. SOLUTION: A wafer W is mounted on a lower electrode 106 disposed within a processing chamber 104 of an etching apparatus 100, and a predetermined rate of Cl2 is introduced into the chamber 104. A pressure in the chamber 104 is set at an initial level by adjusting the amount of Cl2 to be discharged. The initial pressure is found by processing the wafer W having a coverage ratio (of an area of an SiO2 divided by an area of an Si film layer) varying depending on the flow rate of Cl2, finding a difference between internal pressures of the chamber 104 before and after plasma generation, and adding a value obtained from the coverage ratio and pressure difference to a processing pressure value. When a high frequency power is supplied to a lower electrode 104 for plasma generation after the internal pressure of the chamber 104 reaches the initial pressure, the pressure dropped after the plasma generation becomes substantially equal to the processing pressure, and thus stable plasma can be realized.