CRYSTALIZING METHOD OF AMORPHOUS SILICON LAYER AND METHOD OF FABRICATING THIN FILM TRANSISTOR USING THE SAME
申请公布号:KR100234894(B1)
申请号:KR19970018243
申请日期:1997.05.12
申请公布日期:1999.12.15
发明人:MOON, DAI-KYU
分类号:H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L21/20
主分类号:H01L21/20
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