Semiconductor device having a trench for device isolation fabrication method,申请号US19970874317-传众专利搜索

Semiconductor device having a trench for device isolation fabrication method

申请公布号：US5858859(A)

申请号：US19970874317

申请日期：1997.06.13

申请公布日期：1999.01.12

申请人：

KABUSHIKI KAISHA TOSHIBA

发明人：MIYASHITA, NAOTO;TAKAHASHI, KOICHI

分类号：H01L21/306;H01L21/308;H01L21/762;(IPC1-7):H01L21/76

主分类号：H01L21/306

摘要：A device-isolating trench having a taper at its upper portion is formed in a silicon semiconductor substrate. Then, a silicon oxide film is formed on the inner wall of the trench and the surface of the semiconductor substrate near the trench by an oxidizing method, and polycrystalline silicon is buried in the trench.