ZNO-GA2O3 SINTERED BODY FOR SPUTTERING TARGET AND ITS PRODUCTION,申请号JP19970115764-传众专利搜索

ZNO-GA2O3 SINTERED BODY FOR SPUTTERING TARGET AND ITS PRODUCTION

申请公布号：JPH10306367(A)

申请号：JP19970115764

申请日期：1997.05.06

申请公布日期：1998.11.17

申请人：

SUMITOMO METAL MINING CO LTD

发明人：TAKANASHI SHOJI

分类号：C23C14/34;(IPC1-7):C23C14/34

主分类号：C23C14/34

摘要：PROBLEM TO BE SOLVED: To obtain a ZnO-Ga2 O3 sintered body for a sputtering target free from the generation of abnormal discharge by preparing a ZnO-Ga2 O3 series sintered body contg. a specified amt. of titanium oxide or the like, in which the main composing phases are consisting of ZnO phases in which Ga, Ti or the like are allowed to enter unto solid solutions and the sintered density, volume resistivity, average particle size and maximum pore size are specified. SOLUTION: A ZnO-Ga2 O3 sintered body contg. one or more kinds among titanium oxide, germanium oxide, aluminum oxide, magnesium oxide, indium oxide and tin oxide by 1 to 5 wt.%, in which the main composing phases of the structure are consisting of ZnO phases in which one or more kinds among selected from Ga, Ti, Ge, Al, Mg, In and Sn are allowed to enter into solid solutions preferably by about >=2 wt.% the sintered density is regulated to >=5.2 g/cm<3> , the volume resistivity is regulated to <=2×10<-2>Ω.cm, the average particle size is regulated to 2 to 10μm, and the maximum pore size is regulated to <=2μm is prepd. In this way, the sintered body for a sputtering target capable of stably forming ZnO-Ga2 O3 coating excellent in characteristics is obtd.