Selective deposition process,申请号US19960714882-传众专利搜索

Selective deposition process

申请公布号：US5714798(A)

申请号：US19960714882

申请日期：1996.09.13

申请公布日期：1998.02.03

申请人：

INTERNATIONAL BUSINESS MACHINES CORP.

发明人：ARMACOST, MICHAEL DAVID;GRUNDON, STEVEN ALFRED;HARMON, DAVID LAURANT;NGUYEN, SON VAN;REMBETSKI, JOHN FRANCIS

分类号：B05D7/24;H01L21/3065;H01L21/312;H01L21/762;(IPC1-7):H01L23/58

主分类号：B05D7/24

摘要：Disclosed is a process for depositing a conformal polymer coating on selected areas of a silicon substrate. The substrate is first exposed through a mask to a gaseous plasma so as to form a film of desired pattern, the plasma comprising a compound having strong electron donating characteristics. Then, the patterned film and the remaining substrate not covered by the film are exposed to the vapor of a monomer, which condenses and polymerizes on the exposed substrate surfaces, but not on the film. The film serves to inhibit substantial deposition of the coating, so as to provide a selective deposition, where the coating is formed only on those areas of the substrate where desired.