DATA READING METHOD FOR FERROELECTRIC MEMORY, AND FERROELECTRIC MEMORY,申请号WO1997JP00882-传众专利搜索

DATA READING METHOD FOR FERROELECTRIC MEMORY, AND FERROELECTRIC MEMORY

申请公布号：WO9735314(A1)

申请号：WO1997JP00882

申请日期：1997.03.18

申请公布日期：1997.09.25

申请人：

MATSUSHITA ELECTRONICS CORPORATION;HIRANO, HIROSHIGE;ASARI, KOJI

发明人：HIRANO, HIROSHIGE;ASARI, KOJI

分类号：G11C11/22;(IPC1-7):G11C11/22;G11C11/40;H01L27/10

主分类号：G11C11/22

摘要：A ferroelectric memory reading method capable of carrying out a low-voltage operation more reliably than a conventional method of this kind, and a ferroelectric memory are provided. In order to achieve the above objects, an operation for turning the electric potentials of bit lines BLO, /BLO into logical voltages "H", "L" respectively is carried out by a sense amplifier after a pulsatile cell plate signal CP has been applied to a cell plate electrode as shown in, for example, the figure. Namely, an electric field is temporarily applied to a ferroelectric capacitor, and then the application of a signal to the cell plate electrode is controlled so as not to apply the electric field to the same capacitor, the electric potentials of the bit lines being thereafter amplified by a sense amplifier.