SILICON WAFER CARRIER HAVING PERMANENT ANTISTATIC PROPERTY,申请号JP19960003057-传众专利搜索

SILICON WAFER CARRIER HAVING PERMANENT ANTISTATIC PROPERTY

申请公布号：JPH09194703(A)

申请号：JP19960003057

申请日期：1996.01.11

申请公布日期：1997.07.29

申请人：

TEIJIN LTD

发明人：CHIYOU ONRAI;YAMAMOTO SATOSHI

分类号：C08L67/02;C08L67/00;H01L21/673;H01L21/68;(IPC1-7):C08L67/02

主分类号：C08L67/02

摘要：<p>PROBLEM TO BE SOLVED: To obtain a silicon wafer carrier excellent in permanent antistatic properties and extremely slight in exudation of metal impurities on the surface of the carrier, by melting and blending a polyether ester amide having a specific melt viscosity and a melt viscosity ratio with a polyester resin and molding the blend in a high shear field. SOLUTION: This silicon wafer carrier is obtained by blending (A) 100 pts.wt. of a thermoplastic polyester resin (0.6-1.20 intrinsic viscosity) with (B) 5-30 pts.wt. of a polyether ester amide (having 10-1,000Pa.S apparent melt viscosity at 1000sec<-1> apparent shear rate at 260 deg.C and 0.01-1 ratio of the apparent melt viscosity to that of the component A in a melt state and injection molding the blend in a high shear field. The polyether ester amide is segregated on the surface layer of the carrier in a molding process to show excellent antistatic properties.</p>