InP/InGaAs monolithic integrated demultiplexer, photodetector, and heterojunction bipolar transistor
申请公布号:EP0758799(A2)
申请号:EP19960305797
申请日期:1996.08.07
申请公布日期:1997.02.19
发明人:CHANDRASEKHAR, S.
分类号:G02B6/42;G02B6/12;G02B6/122;G02B6/28;H01L21/331;H01L21/8222;H01L27/06;H01L27/14;H01L27/144;H01L29/205;H01L29/73;H01L29/737;H01L31/0232;H04B10/02;H04B10/28;(IPC1-7):H01L27/144
主分类号:G02B6/42
摘要:<p>The present invention relates to a monolithic integrated demultiplexing photoreceiver (10) that is formed on a semi-insulating InP substrate(16). A frequency routing device (11) is formed on the substrate and includes a first plurality of InP/InGaAs semiconductor layers. At least one p-i-n photodiode (12) is also formed on the substrate and includes a second plurality of InP/InGaAs semiconductor layers. Additionally, at least one single heterostructure bipolar transistor (18) is formed on the substrate and includes a third plurality of InP/InGaAs semiconductor layers. At least one layer from each of the first, second and third plurality of layers are substantially identical to one another. <IMAGE></p>
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