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MANUFACTURE OF SEMICONDUCTOR DEVICE

申请公布号:JPH0922988(A)

申请号:JP19950171190

申请日期:1995.07.06

申请公布日期:1997.01.21

申请人:
NITTETSU SEMICONDUCTOR KK

发明人:NAKANO ATSUSHI

分类号:H01L27/04;H01L21/822;H01L21/8242;H01L27/108

主分类号:H01L27/04

摘要:PROBLEM TO BE SOLVED: To provide a semiconductor device having stacked capacitors capable of obtaining sufficient capacity without increasing the number of manufacturing steps. SOLUTION: After an N-type polycrystal silicon film 23 containing phosphorus is formed on a semiconductor substrate 16 by using a CVD unit, non-doped polycrystal silicon film 24 is formed on the film 23 continuously in the unit. Then, the upper surface formed of the films 23, 24 is formed with an uneven lower electrode 25.

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