WAFER SUPPORTING MEMBER,申请号JP19950073278-传众专利搜索

WAFER SUPPORTING MEMBER

申请公布号：JPH08274146(A)

申请号：JP19950073278

申请日期：1995.03.30

申请公布日期：1996.10.18

申请人：

KYOCERA CORP

发明人：NAGANO SABURO

分类号：H01L21/683;H01L21/205;H01L21/68;(IPC1-7):H01L21/68

主分类号：H01L21/683

摘要：<p>PURPOSE: To obtain a supporting member which can highly absorb light having the wavelength of a halogen lamp, can transmit absorbed heat throughout its entire body so that the member can uniformly heat a wafer, is hardly eroded by a halogenated gas, and has a long service life. CONSTITUTION: A wafer supporting member is formed of a sintered body of an aluminum nitride composed mainly of AIN containing Er2 O3 as a sintering auxiliary and Si within the range of 200-500ppm and having thermal conductivity of >=150W/mk. For example, a semiconductor wafer 20 is set on a susceptor 10 composed of a blacking purple sintered body of aluminum nitride and film forming gas is supplied to the wafer 20 while a high-frequency voltage is applied to an electrode 22 in a plasma section and upper electrode 23 for generating plasma. Then the wafer 20 is indirectly heated with a halogen lamp 30 provided below the susceptor 10.</p>