Semiconductor memory device and method of making the same

申请公布号：EP0723297(A2)

申请号：EP19960100791

申请日期：1996.01.19

申请公布日期：1996.07.24

申请人：

SEIKO EPSON CORPORATION

发明人：TAKEUCHI, MASAHIRO;TOKUDA, YASUNOBU

分类号：G11C11/41;H01L21/8244;H01L27/11;(IPC1-7):H01L27/11;H01L21/824

主分类号：G11C11/41

摘要：<p>A first word line connects the gate electrodes of first transfer transistors in adjacent memory cells. A second word line connects the gate electrodes of second transfer transistors in adjacent memory cells. A ground line connects the source regions of first and second driver transistors. The first and second word lines and ground line are formed by a wiring layer different from the wiring layer that forms the gate electrodes of the first and second transfer transistors. The ground line shields the first and second driver transistors, TFTs and the like. Drain contacts include chamfered sides between which the ground line is disposed. &lt;IMAGE&gt;</p>

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