Row driving circuit for memory devices,申请号US19940359052-传众专利搜索

Row driving circuit for memory devices

申请公布号：US5513147(A)

申请号：US19940359052

申请日期：1994.12.19

申请公布日期：1996.04.30

申请人：

ALLIANCE SEMICONDUCTOR CORPORATION

发明人：PRICKETT, JR., BRUCE L.

分类号：G11C8/08;G11C16/12;(IPC1-7):G11C8/00

主分类号：G11C8/08

摘要：A row driving circuit (10) having a reduced number of transistors provides range of row deselect voltages, and eliminates the need for an NMOS pull-down device. The row driving circuit (10) has a-level shifter (14) formed by a PMOS input pull transistor P1 that is drain coupled at node V 10 to an NMOS input transistor N1. N1 functions as passgate for a row select signal and inverted row select signal applied to its gate and source respectively. A PMOS row pull-up transistor P2 has its gate coupled to V 10, its source coupled to a variable positive supply voltage (12), and its drain coupled to the source of a PMOS row select transistor P3. The drain and gate of P3 are coupled to switching circuits S 11 and S 12 respectively. S 11 and S 12 provide gate and drain voltages to quickly deselect the row by pulling the row to a negative deselect voltage. A PMOS erase transistor is also source coupled to the row with its gate coupled to switching circuit S 13 and its drain coupled to switching circuit S14. S13 and S14 provide a negative erase voltage to both the gate and drain of P4. In addition, S13 and S 14 can bias P4 into linear mode, allowing P4 to operate a leaker transistor, pulling the row down to a deselect voltage.