Processing complex semiconductors
申请公布号:GB9525978(D0)
申请号:GB19950025978
申请日期:1995.12.19
申请公布日期:1996.02.21
分类号:C30B11/00;C30B33/00
主分类号:C30B11/00
摘要:A method and charge composition for obtaining Hg 1-x Cd x Te (x 0.2) single crystals and wafers with predetermined properties includes heating a vessel with a charge consisting of high-purity Cd, Hg and Te, and optionally containing indium, in a two-zone furnace in the temperature field 704-715{C; holding it for homogenisation and passing through an axial temperature gradient not exceeding 3{C/cm at a speed of 70-85 m/hour for the purpose of crystallisation. A charge for growing single crystals of A II B VI semiconductive compounds, specifically cadmium telluride, additionally includes in its composition together with cadmium and tellurium one or two elements from the group of sulphur, selenium and zinc. A method of preparing wafers of complex semiconductive materials includes polishing and washing of a group of wafers simultaneously on both sides without adhesive attachment of the wafers. Treatment is carried out in four stages: three polishing stages and one washing stage, in a special device which includes a lower driving polisher (2), an upper polisher (1) offset relative to the lower and freely rotatable, and a separator (3) disposed between them, in the aperture of which the wafers (9) are placed. Treatment of wafers of bulk single crystals, epitaxial structures and complex multi-layer heterostructures of arbitrary shape. As a result of the treatment, wafers have a mirror surface without a mechanically disturbed layer. Methods of fabricating Hg 1-x Cd x Te photosensors are also disclosed.
SUBSTITUTED AZOLYLALKYL-T-BUTYL-KETONES AND-CARBINOLS
THEFT DETECTION APPARATUS USING SATURABLE MAGNETIC TARGETS
INSPECTING DEVICE FOR POSITIONAL DEVIATION OF ARTICLE
REACTIVE GAS FOR VAPOR PHASE REACTION
METHOD OF MOUNTING INDOOR INSTALLING ENVIROMENT RESISTANCE TYPE ELECTRONIC DEVICE HOUSING
POLYMER COMPOSITION CONTAINING DIAZABICYCLOALKANES
PRODUCTION OF FIBER MOLDED OBJECT FOR PRODUCING FIBER REINFORCED METAL COMPOSITE MATERIAL
CONJUGATE FIBER OF SHAPE MEMORY ALLOY AND SHEETLIKE MATERIAL THEREOF