Passivation method and structure for a ferroelectric integrated circuit using hard ceramic materials or the like.,申请号EP19940309207-传众专利搜索

Passivation method and structure for a ferroelectric integrated circuit using hard ceramic materials or the like.

申请公布号：EP0671765(A1)

申请号：EP19940309207

申请日期：1994.12.09

申请公布日期：1995.09.13

申请人：

RAMTRON INTERNATIONAL CORPORATION

发明人：ARGOS, GEORGE, JR.;SPANO, JOHN D.;TRAYNOR, STEVEN D.

分类号：H01L21/8247;H01L21/316;H01L21/822;H01L21/8242;H01L21/8246;H01L23/29;H01L23/31;H01L27/04;H01L27/10;H01L27/105;H01L27/108;H01L29/788;H01L29/792;(IPC1-7):H01L23/29

主分类号：H01L21/8247

摘要：<p>Method of passivating a surface of an integrated circuit by; a) completely fabricating ferroelectric devices in the circuit, b) depositing a passivation layer over the entire surface comprising a ceramic material selected from doped and undoped titanates, zirconates, niobates, tantalates, stannates, hafnates, and manganates and having a Mohs hardness rating of 7 or over.</p>