DEPOSITION OF THIN FILM AND PRODUCTION OF THIN FILM MULTILAYER SUBSTRATE,申请号JP19930334295-传众专利搜索

DEPOSITION OF THIN FILM AND PRODUCTION OF THIN FILM MULTILAYER SUBSTRATE

申请公布号：JPH07202430(A)

申请号：JP19930334295

申请日期：1993.12.28

申请公布日期：1995.08.04

申请人：

HITACHI LTD

发明人：SHISHIDO CHIE;MATSUYAMA YUKIO;KOSHISHIBA HIROYA;SAKAMOTO HARUHISA

分类号：C23F1/00;H01L21/027;H01L21/302;H01L21/3065;H01L21/3213;H01L21/66;H05K3/00;H05K3/06;H05K3/46;(IPC1-7):H05K3/46;H01L21/306

主分类号：C23F1/00

摘要：PURPOSE:To increase the yield by etching a thin metal film using a resist pattern, subjected to correction of defective part, as a mask to form a thin metal film pattern and then correcting the defective part thereof thereby preventing the accumulation of defects during deposition of thin film. CONSTITUTION:A metal film (aluminium) 20 is deposited on a multilayer ceramic substrate 10. It is then coated with a resist 30 which is prebaked and patterned by means of exposure and development. The resist pattern is then inspected and only the deficient defect 32 is corrected before post-baking is effected. Subsequently, the metal film 20 is etched and the resist is stripped. The metal pattern is then inspected and the etching residue 21, 22 is removed and corrected thus correcting all defects. The operation is repeated for a plurality of times thus preventing accumulation of defects and increasing the production yield of the substrate 15.