CHIP TYPE THERMISTOR,申请号JP19930324211-传众专利搜索

CHIP TYPE THERMISTOR

申请公布号：JPH07183105(A)

申请号：JP19930324211

申请日期：1993.12.22

申请公布日期：1995.07.21

申请人：

MITSUBISHI MATERIALS CORP

发明人：NAKAJIMA HIROAKI;ISHIKAWA YOSHIHIKO;KATAOKA HIDETO;KOSHIMURA MASAMI

分类号：H01C1/142;H01C7/00;H01C7/04;(IPC1-7):H01C7/04

主分类号：H01C1/142

摘要：<p>PURPOSE:To obtain the high reliability and high fructure resistance of a chip type thermistor of a structure that the shape retention of a glass layer and baked electrode layers at the time of the formation of the baked electrode layers is good, the surface of the glass layer is smooth, the glass layer is good in outward appearance and is superior in soldering temperature resistance and solder adhesion and there is no change in the resistance value of the thermistor due to a plating treatment of the backed electrode layers. CONSTITUTION:A chip type thermistor 10 is provided with a thermistor base material 11, an insulative glass layer 14 covering the surface of the base material excluding both end surfaces of the base material and a pair of terminal electrodes 12 provided on both end parts inlcuding both end surfaces of the base magterial. The electrodes 12 respectively have baked electrode layers 16 formed on both end parts of the base material and plated layers 18 and 19 formed on the surfaces of these electrode layers. One part or the whole to the layer 14 is constituted of a lower glass layer 14a, which is formed on the surface of the base material and consists of crystalline glass, and an upper glass layer 14b, which is formed on the lower glass layer and consists of amorphous glass having a sealing performance. The glass transition point of a precursor glass of the crystalline glass is confined to a range of 400 to, 1000 deg.C and the crystalline temprature of the precursor glass is higher than the glass transition point.</p>