CRYSTAL GROWTH METHOD OF SEMICONDUCTOR THIN FILM,申请号JP19880150137-传众专利搜索

CRYSTAL GROWTH METHOD OF SEMICONDUCTOR THIN FILM

申请公布号：JPH01318228(A)

申请号：JP19880150137

申请日期：1988.06.20

申请公布日期：1989.12.22

申请人：

TOSHIBA CORP

发明人：ISHIKAWA HIROCHIKA;NARIZUKA SHIGEYA;KAWAHISA YASUTO

分类号：H01L21/205;(IPC1-7):H01L21/205

主分类号：H01L21/205

摘要：PURPOSE:To acquire a semiconductor thin film with good surface homology having fewer dislocations and defects with good reproducibility by obtaining a clean epitaxial growth layer surface of a nonpolar semiconductor on a substrate in advance and by causing a polar semiconductor thin film to grow thereon at once. CONSTITUTION:An Si crystal growth layer 2 is epitaxial-grown on an Si substrate 1 of phase azimuth (100) in a thickness of 1mum at a growth temperature of 1100 deg.C by using SiH4 as raw gas. Then an Si substrate temperature is set at 450 deg.C and a GaAs buffer layer 3 is made to grow in a thickness of 100-200Angstrom . To anneal a GaAs buffer layer 3, the Si substrate temperature is further set to 750 deg.C and held for 10 minutes. After annealing is finished, the substrate temperature is lowered. Then the Si substrate 1 is heated to a usual growth temperature of 750 deg.C and held for about 10 minutes. Thereafter, a GaAs epitaxial layer 4 is grown on a GaAs buffer layer 3. According to this constitution, a good GaAs thin film of good surface which has fewer dislocations and defects can be acquired with good reproducibility.