NON-VOLATILE MEMORY WITH CONTROLLED PROGRAM/ERASE,申请号KR20087022850-传众专利搜索

NON-VOLATILE MEMORY WITH CONTROLLED PROGRAM/ERASE

申请公布号：KR20090003239(A)

申请号：KR20087022850

申请日期：2008.09.19

申请公布日期：2009.01.09

申请人：

FREESCALE SEMICONDUCTOR, INC.

发明人：NISET MARTIN L.;BEATTIE DEREK J.;BIRNIE ANDREW E.;GORMAN ALISTAIR J.;MCGINTY STEPHEN

分类号：G11C16/10;G11C16/14

主分类号：G11C16/10

摘要：A method for programming/erasing a non-volatile memory (NVM) (14) includes performing a program/erase operation (80) on a portion of the NVM (14) using a first set of parameters. The method further includes determining (82) whether each cell in the portion of the NVM (14) passes a first margin level, if not determining which one of a set of lower margin levels than the first margin level each cell in the portion of the NVM (14) passes. The method further includes modifying (92) at least one of the set of parameters associated with a subsequent program/erase operation for the portion of the NVM (14) based on the determined one of the set of lower margin levels.