PHASE SHIFT MASK AND ITS PRODUCTION,申请号JP19920268445-传众专利搜索

PHASE SHIFT MASK AND ITS PRODUCTION

申请公布号：JPH06118619(A)

申请号：JP19920268445

申请日期：1992.10.07

申请公布日期：1994.04.28

申请人：

TOPPAN PRINTING CO LTD

发明人：FUKUSHIMA YUICHI;KONISHI TOSHIO;OKUBO KINJI

分类号：G03F1/34;G03F1/68;G03F1/80;H01L21/027

主分类号：G03F1/34

摘要：PURPOSE:To provide the phase shift mask of a chromiumless type which is usable with a stepper for the conventional photomasks and enables the efficient transfer of extremely fine patterns as well by a phase shift technique and to enable the formation of the fine phase shift patterns of high accuracy on this phase shift mask. CONSTITUTION:This phase shift mask is constituted by forming a main region 10 of a light transparent part and phase shift part including at least circuit patterns for semiconductors, forming the peripheral part exclusive of the main region part 10 of a pattern name part 18, a mask name part 19 and a fiducial mark part 20, etc., different from the circuits for the semiconductors and forming at least a part of a light shielding part 17. This process for production consists in forming light shielding patterns by a first resist layer, then etching the phase shift layer with the patterns of the light shielding parts as a mask and etching the light shielding layer of the main region part 10 by the second resist layer.