MANUFACTURE OF INTEGRATED CIRCUIT
申请公布号:JPH0645537(A)
申请号:JP19920251456
申请日期:1992.09.21
申请公布日期:1994.02.18
发明人:MAJIYUKAARU BII BORA
分类号:H01L27/082;H01L21/225;H01L21/331;H01L21/768;H01L21/8222;H01L23/532;H01L29/73;H01L29/732;(IPC1-7):H01L27/082
主分类号:H01L27/082
摘要:PURPOSE: To simplify an integrated circuit by partly diffusing conductivity-type impurity and impurity of an opposite conductivity-type in a substrate and electrically connecting via a conductive substance layer in the substrate, to form a plurality of regions having opposite conductivity types. CONSTITUTION: An N-type conductivity-type collector 42 of a first transistor Q1 is connected to an N-type conductivity-type polysilicon region 23, and the region 23 is connected via a metal silicide layer 29, and a P-type conductivity- type polysilicon 23' is connected to a base 15' of a second transistor Q2. A collector 42' of the transistor Q2 is eventually connected to a base 15 of the transistor Q1 via an N-type conductivity-type polysilicon region 25', metal silicide 29', P-type conductivity-type polysilicon region 25 and a base contact 45. An embedded layer 12 is commonly connects the emitters of both the transistors Q1 and Q2. Thus, a flip-flop with a small size can be formed.
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