High responsivity ultraviolet gallium nitride detector
申请公布号:AU4599993(A)
申请号:AU19930045999
申请日期:1993.06.08
申请公布日期:1994.01.04
发明人:JAMES M VAN HOVE;JON N KUZNIA;DONALD T OLSON;MUHAMMAD ASIF KHAN;MARGARET C BLASINGAME
分类号:H01L31/0224;H01L31/0304;H01L31/18
主分类号:H01L31/0224
摘要:The invention is an AlxGa1-xN ultraviolet detector with extremely high responsivity at over 200 to 365 nanometers and a very sharp long wavelength cutoff. The active layer for the sensors is a single crystal AlxGa1-xN preferably deposited over a basal plane sapphire substrate using a switched atomic layer epitaxy process.
VALVE TIMING CONTROL SYSTEM FOR INTERNAL COMBUSTION ENGINE
BOOT FITTING STRUCTURE AND METHOD
SEALING METHOD OF TURNDOWN OF EDGE
ELECTRIC POWER STEERING DEVICE
MOLDING ELEMENT AND MOLD FOR FORMING CUTOUT ON TREAD
PRODUCTION OF HYDROPHOBIC PRECIPITATED SILICA
FACILITIES FOR TUNNEL WIDENING CONSTRUCTION
FRONT PASSENGER SEAT AIRBAG ACTUATION CONTROL SYSTEM
CBN BLADE FOR CUTTING HARD MATERIAL, AND CUTTER